2026
[1] Controlling tail-group configurations in self-assembled monolayers for high performance area-selective atomic layer
deposition
Applied Surface Science, Vol. 730
Seong Woo Jeong, Yong-Woo Choi, Dong Woo Kim, Sung-Wook Hong, Changyu Park, Sangjun Lee, Wonseob Cho,
Yunhee Cho, Hana Lee, Hyeji Kim, Andreas Klipp, Hyoungsub Kim*, Pil J. Yoo*
[2] Dual-Doped Cylindrical Bit-Line Pad for High-Efficiency Bulk Erase in V-NAND Flash
IEEE Access, Vol. 14
Choasub Kim, Jiwook Hong, Moonchurl Kim, Hyoungsub Kim*, and Jongwook Jeon*
[3] Lateral Leakage Suppression Using H₂ Plasma-Treated SiNₓ for High-Resolution Organic Displays
IEEE Electron Device Letters, Vol. 47
Joohee Oh, Moonchurl Kim, Changyu Park, Byeongjun Joo, Sangho Park, Jongwook Jeon*, and Hyoungsub Kim*
[4] Multispectral Ferroelectric Optoelectronic Synapses with Polarization-Controlled Memory Capability for Brain-Inspired
Visual Processing
Laser & Photonics Reviews, Vol. 20
Hyunhee Kim, Deokjoon Eom, Jeehoon Kim, Donghyun Kang, Hyoungsub Kim*, Yong-Hoon Kim*
2025
[1] High-pressure hydrogen annealing for resistivity reduction of ultrathin tungsten electrodes
Journal of Alloys and Compounds, Vol. 1010
Seunghyun Park, Sungjun Kim, Changyu Park, Hyoungsub Kim*
[2] Post-treatment of monolayer MoS₂ field-effect transistors with H₂O vapor: alleviation of remote channel doping
ACS Applied Materials & Interfaces, Vol. 17
Heesoo Lee, Byeongchan Kim, Minseo Jang, Seongdae Kwon, Donghyeop Lee, Sumin Kang, Jinhong Park, Kibum Kang, Hyoungsub Kim*
[3] Comparative analysis of Y₂O₃ and Al₂O₃ interfacial layers in modulating the electrical properties of ZrO₂ and HfO₂ on
Ge
Semiconductor Science and Technology, Vol. 40
Woohui Lee, Hyungchul Shin, Jinwoong Chae, Jehoon Lee, Deokjoon Eom, Joohee Oh and Hyoungsub Kim*
[4] Capacitance Boosting of Antiferroelectric-Hf₀.₂Zr₀.₈O₂/Al₂O₃ Blocking Layer Using Y₂O₃ Interfacial Layer for Charge
Trap Flash Memory
Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 19
Jehoon Lee, Deokjoon Eom, Heesoo Lee, Woohui Lee, Joohee Oh, Changyu Park, and Hyoungsub Kim*
[5] Temperature-driven co-optimization of IGZO/HZO ferroelectric field-effect transistors for optoelectronic neuromorphic
computing
Nano Energy, Vol. 138
Deokjoon Eom, Hyunhee Kim, Woohui Lee, Changyu Park, Jinsung Park, Heesoo Lee, Taegyu Kim, San Nam, Yong-
Hoon Kim*, Hyoungsub Kim*
[6] Correlation between Crystalline Defects and Electrical Characteristics of In Situ Boron-Doped Epitaxial Si₀.₈Ge₀.₂ Films
Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 19
Hyungchul Shin, Deokjoon Eom, Dongmin Yoon, Kangwon Kim, Hyung Keun Yoo, Dae-Hong Ko, and Hyoungsub Kim*
[7] Steep-Slope IGZO Transistor Monolithically Integrated with Initialization-Free Ag/Ti/Hf₀.₈Zr₀.₂O₂ Atomic Threshold
Switch
Advanced Electronic Materials, Vol. 11
Junmo Park, Hanggyo Jung, Deokjoon Eom, Heesoo Lee, Hyunhee Kim, Yonghoon Kim, Jongwook Jeon*, and
Hyoungsub Kim*
[8] Enhancing selectivity in area-selective atomic layer deposition of Al₂O₃ on Cu using N₂ co-flow
Journal of Materials Chemistry C, Vol. 13
Sangjun Lee, Changyu Park, Yong-Woo Choi, Seong Woo Jeong, Sung-Wook Hong, Yunhee Cho, Hana Lee, Hyeji Kim,
Andreas Klipp, Pil J. Yoo and Hyoungsub Kim*
[9] Novel p-Type Bulk-Inserted Bitline Pad Structure for Efficient Erase Operation in Vertical NAND Flash Memory
IEEE Transactions on Electron Devices, Vol. 72
Choasub Kim, Jiwook Hong, Moonchurl Kim, Hyoungsub Kim*, and Jongwook Jeon*
[10] Oxidative stability of WS₂ during O₃-based atomic layer deposition and annealing of ferroelectric Hf₁₋ₓZrₓO₂ film
Applied Surface Science, Vol. 710
Kwangwuk Park, Deokjoon Eom, Kwangsik Jeong, Hyoungsub Kim*
[11] Interface Reactions during Annealing-Induced Ferroelectric Phase Formation in Hf₀.₅Zr₀.₅O₂ Films on HfS₂ and MoS₂
Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 19
Kwangwuk Park, Mirine Leem, Deokjoon Eom, and Hyoungsub Kim*
[12] From N-type doping to phase transition in large-area MoS₂ via controlled sulfur vacancy formation
Nanoscale, Vol. 17
Jimin Kim, Jieun Kang, Hyewon Han, Sunjae Jeong, Siyeon Kim, Heesoo Lee, Hyoungsub Kim, Yongil Kim* and
Geunyoung Yeom*
2024
[1] Ultrathin Al₂O₃ interfacial layer for Hf₀.₅Zr₀.₅O₂-based ferroelectric field-effect transistors
Journal of Physics D: Applied Physics, Vol. 57
Jehoon Lee, Deokjoon Eom, Heesoo Lee, Woohui Lee, Joohee Oh, Changyu Park and Hyoungsub Kim*
[2] Effects of Grain Size on Various Electrical Trap Extraction Methods in Low-Temperature Polysilicon Thin Films
IEEE Transactions on Electron Devices, Vol. 71
Joohee Oh, Woohui Lee, Myoung Geun Cha, Hyoungsub Kim*
2023
[1] Combined effects of the deposition temperature and metal electrodes on ferroelectric properties of atomic-layer-
deposited Hf₀.₅Zr₀.₅O₂ films
Journal of Physics D: Applied Physics, Vol. 56
Deokjoon Eom, Jehoon Lee, Woohui Lee, Joohee Oh, Changyu Park, Jinyong Kim, Hyangsook Lee, Eunha Lee,
Hyoungsub Kim*
[2] Electrical properties of HfO₂ on Si₁₋ₓGeₓ substrates pretreated using a Y precursor with and without subsequent oxidant
pulsing
ACS Applied Electronic Materials, Vol. 5
Woohui Lee, Jehoon Lee, Deokjoon Eom, Joohee Oh, Changyu Park, Jinyong Kim, Hyungchul Shin, Hyoungsub Kim*
[3] Effects of high-pressure H₂ and D₂ post-metallization annealing on the electrical properties of HfO₂/Si₀.₇Ge₀.₃
Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 17
Jinyong Kim, Seongheum Choi, An Hoang-Thuy Nguyen, Woohui Lee, Rino Choi, Hyoungsub Kim*
[4] Wafer-Scale Epitaxial Growth of an Atomically Thin Single-Crystal Insulator as a Substrate of Two-Dimensional Material
Field-Effect Transistors
Nano Letters, Vol. 23
Eun Hye Kim, Do Hee Lee, Tae Jun Gu, Hyobin Yoo, Yamujin Jang, Jaemo Jeong, Hyun-Woo Kim, Seog-Gyun Kang,
Hoijoon Kim, Heesoo Lee, Kyu-Jin Jo, Beom Ju Kim, Jin Wook Kim, Seong Hyun Im, Chang Seok Oh, Changgu Lee, Ki
Kang Kim, Cheol-Woong Yang, Hyoungsub Kim, Youngkuk Kim, Philip Kim*, Dongmok Whang*, and Joung Real Ahn*
[5] Solution printable multifunctional polymer-based composites for smart electromagnetic interference shielding with
tunable frequency and on-off selectivities
Advanced Composites and Hybrid Materials, Vol. 6
Mina Seol, Uiseok Hwang, Junyoung Kim, Deokjoon Eom, In-Kyung Park, Hyoungsub Kim, Jonghwan Suhr, Jae-Do
Nam*
[6] Direct growth and interface reactions of ferroelectric Hf₀.₅Zr₀.₅O₂ films on MoS₂
Applied Surface Science, Vol. 629
Mirine Leem, Deokjoon Eom, Heesoo Lee, Kwangwuk Park, Kwangsik Jeong, Hyoungsub Kim*
[7] Three-Dimensional Surface Treatment of MoS₂ Using BCl₃ Plasma-Derived Radicals
ACS Applied Materials & Interfaces, Vol. 15
Heesoo Lee, Hoijoon Kim, Kihyun Kim, Kwangsik Jeong, Mirine Leem, Seunghyun Park, Jieun Kang, Geunyoung Yeom,
Hyoungsub Kim*
2022
[1] Sublayer thickness dependence of nanolaminated HfO₂-Al₂O₃ films for ferroelectric phase stabilization
Applied Physics Letters, Vol. 120
Jehoon Lee, Deokjoon Eom, Changmin Lee, Woohui Lee, Joohee Oh, Changyu Park, Jinyong Kim, Hyangsook
Lee, Sangjun Lee, Eunha Lee*, Hyoungsub Kim*
[2] Impact of various pulse-bases on charge boost in ferroelectric capacitors
IEEE Electron Device Letters, Vol. 43
Gwon Kim, Jaehyuk Lim, Deokjoon Eom, Yejoo Choi, Hyoungsub Kim, Changhwan Shin*
[3] Vertical homo-junction In₀.₅₃Ga₀.₄₇As tunneling field-effect transistors with minimum subthreshold swing of 52
mV/decade
Solid State Electronics, Vol. 197
Jimin Baek, Hyojin Kim, Jihoon Yoo, Juwon Shin, Kiyong Shin, Walid Amir, Gunwu Ju, Hyungjun Kim, Joohee Oh,
Hyoungsub Kim, Taewoo Kim*, Daehyun Kim*
2021
[1] Sulfidation characteristics of amorphous nonstoichiometric Mo-oxides for MoS₂ synthesis
Applied Surface Science, Vol. 535
Hoijoon Kim, Taejin Park, Mirine Leem, Hyangsook Lee, Wonsik Ahn, Eunha Lee, Hyoungsub Kim*
[2] Area-selective atomic layer deposition of MoS₂ using simultaneous deposition and etching characteristics of MoClₓ
Physica Status Solidi (RRL) - Rapid Research Letters, Vol. 15
Wonsik Ahn, Hyangsook Lee, Hoijoon Kim, Mirine Leem, Heesoo Lee, Taejin Park, Eunha Lee, Hyoungsub Kim*
[3] Effect of H₂S pre-annealing treatment on interfacial and electrical properties of HfO₂/Si₁₋ₓGeₓ (x = 0–0.3)
Journal of Materials Chemistry C, Vol. 9
Woohui Lee, Changmin Lee, Jinyong Kim, Jehoon Lee, Deokjoon Eom, Jae Chan Park, Tae Joo Park, Hyoungsub Kim*
[4] 3D-to-2D phase transformation through highly ordered 1D crystals: from transition-metal oxide to its dichalcogenides
Materials Today, Vol. 47
Hyangsook Lee, Yeonchoo Cho, Kwang-Sik Jeong, Taejin Park, Mirine Leem, Wonsik Ahn, Hoijoon Kim, Jung-Hwa Kim,
Heegu Kim, Mann-Ho Cho, Eunha Lee*, Hyoungsub Kim*, Sung Woo Hwang
[5] Traps at the hBN/WSe₂ interface and their impact on polarity transition in WSe₂
2D Materials, Vol. 8
Fida Ali, Faisal Ahmed, Muhammad Taqi, Sekhar Babu Mitta, Tien Dat Ngo, Deokjoon Eom, Kenji Watanabe, Takashi
Taniguchi, Hyoungsub Kim, Euyheon Hwang and Won Jong Yoo*
[6] Unveiling the origin of robust ferroelectricity in sub-2 nm hafnium zirconium oxide films
ACS Applied Materials & Interfaces, Vol. 13
Hyangsook Lee, Duk-Hyun Choe, Sanghyun Jo, Jung-Hwa Kim, Hyun Hwi Lee, Hyun-Joon Shin, Yeehyun Park,
Seunghun Kang, Yeonchoo Cho, Seontae Park, Taehwan Moon, Deokjoon Eom, Mirine Leem, Yunseok Kim, Jinseong
Heo, Eunha Lee, Hyoungsub Kim*
[7] Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin
film
Materials Research Express, Vol. 8
Woohui Lee, Joohee Oh, Jae Hwan Chu, Sanggun Choi, Taewook Kang, Hyeyoung Chu, Hyoungsub Kim*
[8] Ferroelectric switching in GeTe through rotation of lone-pair electrons by electric field-driven phase transition
Applied Materials Today, Vol. 24
Kwangsik Jeong, Hyangsook Lee, Changwoo Lee, Lim Hyeon Wook, Hyoungsub Kim, Eunha Lee*, Mann-Ho Cho*
[9] Thermal stability of MgO film on Si grown by atomic layer deposition using Mg(EtCp)₂ and H₂O
Ceramics International, Vol. 47
Changyu Park, Changmin Lee, Woohui Lee, Jehoon Lee, Jinyong Kim, Deokjoon Eom, Joohee Oh, Sung-Hae Lee*,
Hyoungsub Kim*
2020
[1] Characteristics of amorphous carbon layer as a diffusion barrier for an advanced copper interconnect
ACS Applied Materials & Interfaces, Vol. 12
Byeong-Seon An, Yena Kwon, Jin-Su Oh, Changmin Lee, Seongheum Choi, Hyoungsub Kim*, Miji Lee, Sangwoo Pae
and Cheol-Woong Yang*
[2] Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique
Solid-State Electronics, Vol. 164
Ji-Min Baek, Hyeon-Bhin Jo, Do-Young Yun, In-Geun Lee, Changmin Lee, Chan-Soo Shin, Hyoungsub Kim, Dae-Hong
Ko, Tae-Woo Kim*, Dae-Hyun Kim*
[3] Intriguing morphological evolution during chemical vapor deposition of HfS₂ using HfCl₄ and S on sapphire substrate
Applied Surface Science, Vol. 509
Mirine Leem, Hyangsook Lee, Taejin Park, Wonsik Ahn, Hoijoon Kim, Eunha Lee, Hyoungsub Kim*
[4] Resistive switching and synaptic behaviors of an HfO₂/Al₂O₃ stack on ITO for neuromorphic systems
Journal of Alloys and Compounds, Vol. 826
Chandreswar Mahata, Changmin Lee, Youngseo An, Min-Hwi Kim, Suhyun Bang, Chae Soo Kim, Ji-Ho Ryu, Sungjun
Kim, Hyoungsub Kim*, Byung-Gook Park*
[5] Introduction of an Al Seed Layer for Facile Adsorption of MoCl₅ during Atomic Layer Deposition of MoS₂
Physica Status Solidi A, Vol. 217
Wonsik Ahn, Hyangsook Lee, Yeonchoo Cho, Kyung-Eun Byun, Hoijoon Kim, Mirine Leem, Heesoo Lee, Taejin
Park, Eunha Lee, Hyeon-Jin Shin, Hyoungsub Kim*
[6] Effect of Al₂O₃/Alucone nanolayered composite overcoating on reliability of Ag nanowire electrodes under bending
fatigue
Journal of Alloys and Compounds, Vol. 846
Byungil Hwang*, Nadeem Qaiser, Changmin Lee, Paolo Matteini, Seung Jo Yoo, Hyoungsub Kim
2019
[1] Relative activation energy for laser-induced crystallization of phase change materials
Japanese Journal of Applied Physics, Vol. 58
Taejin Park, Mann-Ho Cho and Hyoungsub Kim
[2] Effect of Millisecond Annealing Temperature of Ni₁₋ₓPtₓSi Formation on Leakage Current Characteristics of Static
Random-Access Memory Cells
IEEE Transactions on Electron Devices, Vol. 66
Jinbum Kim, Taejin Park, Seounghoon Lee, Siyoung Lee, Chulsung Kim, Sangjin Hyun, Yihwan Kim, Kihyun Hwang, and
Hyoungsub Kim
[3] Lamellar-structured Ni-silicide film formed by eutectic solidification
Journal of Alloys and Compounds, Vol. 771
Jinbum Kim, Youngheum Jung, Sungho Lee, Seongpyo Hong, Seongheum Choi, Jinyong Kim, Taejin Park, Eunha Lee,
Jung Yeon Won, Hyung-Ik Lee, Yun Jae Lee, Bosung Kim, Joong Jung Kim, Yihwan Kim, Kihyun Hwang, Cheol-Woong
Yang and Hyoungsub Kim
[4] Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si (001)
Microelectronic Engineering, Vol. 205
Jinbum Kim, Hyangsook Lee, Jung-Hwa Kim, Ilgyou Shin, Jeongho Yoo, Seokhoon Kim, Seongheum Choi, Jinyong Kim,
Taejin Park, Yihwan Kim, Kihyun Hwang, Eunha Lee*, Hyoungsub Kim*
[5] Non-equilibrium fractal growth of MoS₂ for electrocatalytic hydrogen evolution
CrystEngComm, Vol. 21
Taejin Park, Changdeuck Bae, Hyangsook Lee, Mirine Leem, Hoijoon Kim, Wonsik Ahn, Jinbum Kim, Eunha Lee,
Hyunjung Shin, and Hyoungsub Kim
[6] Fracture behavior of metal oxide/silver nanowire composite electrodes under cyclic bending
Journal of Alloys and Compounds, Vol. 773
Changmin Lee, Hyoungsub Kim, Byungil Hwang
[7] Effects of thermal and electrical stress on defect generation in InAs metal-oxide-semiconductor capacitor
Applied Surface Science, Vol. 467–468
Min Baik, Hang-Kyu Kang, Yu-Seon Kang, Kwang-Sik Jeong, Changmin Lee, Hyoungsub Kim, Jin-Dong Song, Mann-Ho
Cho
[8] Ultrathin monolithic HfO₂ formed by Hf-seeded atomic layer deposition on MoS₂: Film characteristics and its transistor
application
Thin Solid Films, Vol. 673
Hoijoon Kim, Taejin Park, Seongjae Park, Mirine Leem, Wonsik Ahn, Hyangsook Lee, Changmin Lee, Eunha Lee, Jeong-
Jun Jeong, Seongjun Park, Yunseok Kim, Hyoungsub Kim
[9] Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni₁₋ₓPtₓSi₂
formation
Journal of Alloys and Compounds, Vol. 788
Jinbum Kim, Ilgyou Shin, Taejin Park, Jinyong Kim, Seongheum Choi, Sungho Lee, Sengpyo Hong, Hyung-Ik Lee, Jung
Yeon Won, Taegon Ki, Yihwan Kim, Kihyun Hwang, Hoo-Jeong Lee, Hyoungsub Kim
[10] P-N Junction Diode Using Plasma Boron-Doped Black Phosphorous for High-Performance Photovoltaic Devices
ACS Nano, Vol. 13
Dae-Kyoung Kim, Seok-Bo Hong, Kwangsik Jeong, Changmin Lee, Hyoungsub Kim and Mann-Ho Cho
[11] Trap-assisted high responsivity of a phototransistor using bi-layer MoSe₂ grown by molecular beam epitaxy
Applied Surface Science, Vol. 494
Yoon-Ho Choi, Gi-Hyeon Kwon, Jae-Hun Jeong, Kwang-Sik Jeong, Hyeokjae Kwon, Youngseo An, Minju Kim,
Hyoungsub Kim, Yeonjin Yi, Seongil Im, Mann-Ho Cho
[12] Electrical properties of the HfO₂/Al₂O₃ dielectrics stacked using single- and dual-temperature atomic-layer deposition
processes on In₀.₅₃Ga₀.₄₇As
Semiconductor Science and Technology, Vol. 34
Changmin Lee, Sungho Choi, Youngseo An, Byeong-Seon An, Woohui Lee, Wan Oh, Deokjoon Eom, Jehoon Lee,
Cheol-Woong Yang, and Hyoungsub Kim
[13] Self-aligned double patterning for active trim contacts with anisotropic pattern pitches in sub-20 nm dynamic random
access memories
Journal of Micro-Nanolithography, MEMS, and MOEMS, Vol. 18
Kiseok Lee, Dongoh Kim, Chansic Yoon, Taejin Park, Sunghee Han, Yoosang Hwang, Kyupil Lee, Hokyu Kang,
Hyoungsub Kim
2018
[1] Electrical Properties of HfO₂/Al₂O₃ Dielectrics Fabricated on In₀.₅₃Ga₀.₄₇As by Using Atomic Layer Deposition at Low
Temperatures (100–200°C)
Journal of the Korean Physical Society, Vol. 72
Sungho Choi, Jeongkeun Song, Youngseo An, Changmin Lee, Hyoungsub Kim
[2] Homogeneous molybdenum disulfide tunnel diode formed via chemical doping
Applied Physics Letters, Vol. 112
Xiaochi Liu, Deshun Qu, Min Sup Choi, Changmin Lee, Hyoungsub Kim, and Won Jong Yoo
[3] Shallow doping effect of ZnO treatment using atomic layer deposition process on p-type In₀.₅₃Ga₀.₄₇As
Journal of Physics D: Applied Physics, Vol. 51
Changmin Lee, Youngseo An, Sungho Choi and Hyoungsub Kim
[4] Environment-dependent and anion-vacancy-controlled reversible phase transition of MoS₂ synthesized by chemical
vapor deposition
2D Materials, Vol. 5
Hyangsook Lee, Yeonchoo Cho, Un Jeong Kim, Jaegwan Chung, Dongjin Yun, Hoijoon Kim, Eunha Lee, and Hyoungsub
Kim
[5] Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance
Achievement
ACS Applied Materials & Interfaces, Vol. 10
Seung-Hwan Kim, Gwang-sik Kim, June Park, Changmin Lee, Hyoungsub Kim, Jiyoung Kim, Joon Hyung Shim, and
Hyun-Yong Yi
[6] Employment of rapid thermal annealing for solution-processed InGaZnO thin film transistors
Journal of Materials Science-Materials in Electronics, Vol. 29
Hyena Kwak*, Jaehyun Yang*, Jung-gu Kang, Tae-Yil Eom, Hyoungsub Kim, Hoo-Jeong Lee and Chiwon Kang
[7] Novel patterning of flexible and transparent Ag nanowire electrodes using oxygen plasma treatment
Journal of Materials Chemistry C, Vol. 6
Hoijoon Kim, Giseok Lee, Stefan Becker, Ji-Seon Kim, Hyoungsub Kim and Byungil Hwang
2017
[1] Atomic layer deposition of Al₂O₃ on MoS₂, WS₂, WSe₂, and h-BN: surface coverage and adsorption energy
RSC Advances, Vol. 7
Taejin Park, Hoijoon Kim, Mirine Leem, Wonsik Ahn, Seongheum Choi, Jinbum Kim, Joon Uh, Keewon Kwon, Seong-Jun
Jeong, Seongjun Park, Yunseok Kim, and Hyoungsub Kim
[2] Chemically Homogeneous and Thermally Robust Ni₁₋ₓPtₓSi Film Formed Under a Non-Equilibrium Melting/Quenching
Condition
ACS Applied Materials & Interfaces, Vol. 9
Jinbum Kim, Seongheum Choi, Taejin Park, Jinyong Kim, Chulsung Kim, Taeho Cha, Hyangsook Lee, Eunha Lee, Jung
Yeon Won, Hyung-Ik Lee, Sangjin Hyun, Sunjung Kim, Dongsuk Shin, Yihwan Kim, Keewon Kwon, and Hyoungsub Kim
[3] Highly Flexible and Transparent Ag Nanowire Electrode Encapsulated with Ultra-Thin Al₂O₃: Thermal, Ambient, and
Mechanical Stabilities
Scientific Reports, Vol. 7
Byungil Hwang, Youngseo An, Hyangsook Lee, Eunha Lee, Stefan Becker, Yong-Hoon Kim, and Hyoungsub Kim*
[4] Evenly transferred single-layered graphene membrane assisted by strong substrate adhesion
Nanotechnology, Vol. 28
Seongjae Park*, Hoijoon Kim, Daehee Seol, Taejin Park, Mirine Leem, Hyunwoo Ha, Hyesung An, Hyun You Kim, Seong-
Jun Jeong, Seongjun Park, Hyoungsub Kim* and Yunseok Kim*
[5] Ultrasensitive Room-Temperature Operable Gas Sensors Using p-Type Na:ZnO Nanoflowers for Diabetes Detection
ACS Applied Materials & Interfaces, Vol. 9
Rawat Jaisutti*, Minkyung Lee*, Jaeyoung Kim, Seungbeom Choi, Tae-Jun Ha, Jaekyun Kim, Hyoungsub Kim*, Sung Kyu
Park,* and Yong-Hoon Kim*
[6] Al₂O₃ Passivation Effect in HfO₂·Al₂O₃ Laminate Structures Grown on InP Substrates
ACS Applied Materials & Interfaces, Vol. 9
Hang-Kyu Kang, Yu-Seon Kang, Dae-Kyoung Kim, Min Baik, Jin-Dong Song, Youngseo An, Hyoungsub Kim, and Mann-
Ho Cho*
[7] Embedded silver-nanowire electrode in an acrylic polymer-silicate nanoparticle composite for highly robust flexible
devices
Journal of Applied Polymer Science, Vol. 134
Byungil Hwang, Minha Kim, Sung Min Cho, Stefan Becker, Yong-Hoon Kim, Hyoungsub Kim*
[8] Effects of H₂ High-pressure Annealing on HfO₂/Al₂O₃/In₀.₅₃Ga₀.₄₇As Capacitors: Chemical Composition and Electrical
Characteristics
Scientific Reports, Vol. 7
Sungho Choi, Youngseo An, Changmin Lee, Jeongkeun Song, Manh-Cuong Nguyen, Young-Chul Byun, Rino Choi, Paul
C. McIntyre & Hyoungsub Kim
[9] Carrier-Type Modulation and Mobility Improvement of Thin MoTe₂
Advanced Materials, Vol. 29
Deshun Qu, Xiaochi Liu, Ming Huang, Changmin Lee, Faisal Ahmed, Hyoungsub Kim, Rodney S. Ruoff, James Hone,
and Won Jong Yoo
[10] Electrical properties and thermal stability in stack structure of HfO₂/Al₂O₃/InSb by atomic layer deposition
Scientific Reports, Vol. 7
Min Baik, Hang-Kyu Kang, Yu-Seon Kang, Kwang-Sik Jeong, Youngseo An, Seongheum Choi, Hyoungsub Kim, Jin-
Dong Song & Mann-Ho Cho
[11] Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al₂O₃/p-GaSb
capacitors
Journal of Physics D: Applied Physics, Vol. 50
Youngseo An, Changmin Lee, Sungho Choi, Jeongkeun Song, Young-Chul Byun, Dambi Park, Jiyoung Kim, Mann-Ho
Cho and Hyoungsub Kim*
[12] Doping and strain effects on the microstructure of erbium silicide on Si:P
Journal of Alloys and Compounds, Vol. 727
Jinyong Kim, Seongheum Choi, Jinbum Kim, Hyangsook Lee, Byeongseon An, Hyunjung Lee, Choeun Lee, Cheol-
Woong Yang and Hyoungsub Kim*
[13] Synthesis of Vertical MoO₂/MoS₂ Core-Shell Structures on an Amorphous Substrate via Chemical Vapor Deposition
Journal of Physical Chemistry C, Vol. 121
Taejin Park, Mirine Leem, Hyangsook Lee, Wonsik Ahn, Hoijoon Kim, Jinbum Kim, Eunha Lee, Yong-Hoon Kim, and
Hyoungsub Kim*
2016
[1] Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
IEEE Electron Device Letters, Vol. 37
Jaewoo Shim, Gwangwe Yoo, Dong-Ho Kang, Woo-Shik Jung, Young-Chul Byun, Hyoungsub Kim, Won Tae Kang, Woo
Jong Yu, Hyun-Yong Yu, Yongkook Park, and Jin-Hong Park
[2] Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility
in oxide thin-film transistors
Journal of Physical Chemistry C, Vol. 4
Cheol Hyoun Ahn, Hyung Koun Cho, and Hyoungsub Kim
[3] A combinatorial approach to solution-processed InGaO₃(ZnO)ₘ superlattice films: growth mechanisms and their
thermoelectric properties
CrystEngComm, Vol. 18
Sung Woon Cho, Myoungho Jeong, Jun Hyeon Kim, Yong Hun Kwon, Hyoungsub Kim, Jeong Yong Lee and Hyung
Koun Cho
[4] Thickness scaling of atomic-layer deposited HfO₂ films and their application to wafer-scale graphene tunnelling
transistors
Scientific Reports, Vol. 6
Seong-Jun Jeong, Yeahyun Gu, Jinseong Heo, Jaehyun Yang, Chang-Seok Lee, Min-Hyun Lee, Yunseong Lee,
Hyoungsub Kim, Seongjun Park & Sungwoo Hwang
[5] Electrical properties of the HfO₂-Al₂O₃ nanolaminates with homogeneous and graded compositions on InP
Current Applied Physics, Vol. 16
Chandreswar Mahata, Youngseo An, Sungho Choi, Young-Chul Byun, Dae-Kyoung Kim, Taeyoon Lee, Jiyoung Kim,
Mann-Ho Cho, and Hyoungsub Kim
[6] Structural and Electrical Properties of EOT HfO₂ (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal
Stability
ACS Applied Materials & Interfaces, Vol. 8
Yu-Seon Kang, Hang-Kyu Kang, Dae-Kyoung Kim, Kwang-Sik Jeong, Min Baik, Youngseo An, Hyoungsub Kim, Jin-Dong
Song, and Mann-Ho Cho
[7] MoS₂-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity
ACS Applied Materials & Interfaces, Vol. 8
Jaehyun Yang, Hyena Kwak, Youngbin Lee, Yu-Seon Kang, Mann-Ho Cho, Jeong Ho Cho, Yong-Hoon Kim, Seong-Jun
Jeong, Seongjun Park, Hoo-Jeong Lee, and Hyoungsub Kim
[8] Trap-induced photoresponse of solution-synthesized MoS₂
Nanoscale, Vol. 8
Youngbin Lee, Jaehyun Yang, Dain Lee, Yong-Hoon Kim, Jin-Hong Park, Hyoungsub Kim, and Jeong Ho Cho
[9] Optical and Electrical Properties of ZnO Nanocrystal Thin Films Passivated by Atomic Layer Deposited Al₂O₃
Metals and Materials International, Vol. 22
Ji-Hyuk Choi, Jungwoo Kim, Soong Ju Oh, Daekyoung Kim, Yong-Hoon Kim, Heeyeop Chae, and Hyoungsub Kim
[10] Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors
Journal of Alloys and Compounds, Vol. 672
Myeong Gu Yun*, Cheol Hyoun Ahn, Ye Kyun Kim, Sung Woon Cho, Hyung Koun Cho*, Hyoungsub Kim
[11] Formation of a ZnO/ZnS interface passivation layer on (NH₄)₂S treated In₀.₅₃Ga₀.₄₇As
Japanese Journal of Applied Physics, Vol. 55
Antonio T. Lucero*, Young-Chul Byun*, Xiaoye Qin, Lanxia Cheng, Hyoungsub Kim, Robert M. Wallace, and Jiyoung
Kim*
[12] Interfacial Reactions in Ni/6H-SiC at Low Temperatures
Journal of Nanoscience and Nanotechnology, Vol. 16
Suhee Lim*, Jin-Soo Oh, Yena Kwon, Byeong-Seon An, Jee-Hwan Bae, Tae-Hoon Kim, Min-Ho Park, Hyoung-Sub Kim,
and Cheol-Woong Yang*
[13] Improved Data Retention of InSnZnO Nonvolatile Memory by H₂O₂ Treated Al₂O₃ Tunneling Layer: A Cost-Effective
Method
IEEE Electron Device Letters, Vol. 37
Jayapal Raja, Cam Phu Thi Nguyen, Changmin Lee, Nagarajan Balaji, Somenath Chatterjee, Kyungsoo Jang,
Hyoungsub Kim, and Junsin Yi
[14] Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer
Microelectronic Engineering, Vol. 165
Seongheum Choi, Jinyong Kim, Juyun Choi, Sungkil Cho, Minhyeong Lee, Eunjung Ko, Il Cheol Rho, Choon Hwan Kim,
Yunseok Kim, Dae-Hong Ko, Hyoungsub Kim
[15] Improved electroluminescence of quantum dot light-emitting diodes enabled by a partial ligand exchange with
benzenethiol
Nanotechnology, Vol. 27
Dae-Kyoung Kim, Yan Fu, Jungwoo Kim, Ki-heon Lee, Hyoungsub Kim, Heesun Yang, Heeyeop Chae
2015
[1] Hexagonal boron nitride assisted growth of stoichiometric Al₂O₃ dielectric on graphene for triboelectric
nanogenerators
Nano Energy, Vol. 12
Sang A. Han, Kang Hyuck Lee, Tae-Ho Kim, Wanchul Seung, Seok Kyeong Lee, Sungho Choi, Brijesh Kumar, Ravi Bhatia,
Hyeon-Jin Shin, Woo-Jin Lee, SeongMin Kim, Hyoung Sub Kim, Jae-Yong Choi, Sang-Woo Kim
[2] Defect states below the conduction band edge of HfO₂ grown on InP by atomic layer deposition
Journal of Physical Chemistry C, Vol. 119
Yu-Seon Kang, Dae-Kyoung Kim, Hang-Kyu Kang, Sangwan Cho, Sungho Choi, Hyoungsub Kim, Jung-Hye Seo,
Jouhahn Lee, Mann-Ho Cho
[3] Formation of Er-germanosilicide films on strained Si₁₋ₓGeₓ with different Ge contents
Physica Status Solidi A, Vol. 212
Seongheum Choi, Juyun Choi, Hyoungsub Kim
[4] Effects of spontaneous nitrogen incorporation by a 4H-SiC(0001) surface caused by plasma nitridation
Journal of Materials Chemistry C, Vol. 3
Dae-Kyoung Kim, Yu-Seon Kang, Kwang-Sik Jeong, Hang-Kyu Kang, Sang Wan Cho, Kwun-Bum Chung, Hyoungsub Kim
and Mann-Ho Cho
[5] Wafer-scale synthesis of thickness-controllable MoS₂ films via solution-processing using a dimethylformamide/n-
butylamine/2-aminoethanol solvent system
Nanoscale, Vol. 7
Jaehyun Yang, Yeahyun Gu, Eunha Lee, Hyangsook Lee, Sang Han Park, Mann-Ho Cho, Yong Ho Kim, Yong-Hoon Kim,
Hyoungsub Kim
[6] Silicidation of Mo-alloyed ytterbium: Mo alloying effects on microstructure evolution and contact properties
Acta Materialia, Vol. 92
Sekwon Na, Jun-gu Kang, Juyun Choi, Nam-Suk Lee, Chan Gyung Park, Hyoungsub Kim, Seok-Hee Lee and Hoo-Jeong
Lee
[7] In-situ XPS Study of ALD ZnO Passivation of p-In₀.₅₃Ga₀.₄₇As
Electronic Materials Letters, Vol. 11
Antonio T. Lucero, Young-Chul Byun, Xiaoye Qin, Lanxia Cheng, Hyoungsub Kim, Robert M. Wallace, and Jiyoung Kim
[8] Electrical and band structural analyses of Ti₁₋ₓAlₓOᵧ films grown by atomic layer deposition on p-type GaAs
Journal of Physics D: Applied Physics, Vol. 48
Youngseo An, Chandreswar Mahata, Changmin Lee, Sungho Choi, Young-Chul Byun, Yu-Seon Kang, Taeyoon Lee,
Jiyoung Kim, Mann-Ho Cho, and Hyoungsub Kim
[9] Composition Control of CuInSe₂ Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition
Process
Journal of Nanoscience and Nanotechnology, Vol. 15
Yong Hun Kwon, Hyun Woo Do, Hyoungsub Kim, and Hyung Koun Cho
[10] Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering
Nano Letters, Vol. 15
J. W. Ma, W. J. Lee, J. M. Bae, K. S. Jeong, S. H. Oh, J. H. Kim, S.-H. Kim, J.-H. Seo, J.-P. Ahn, H. Kim, and M.-H. Cho
2014
[1] Effect of Crystallinity on the Resistive Switching Behavior of HfAlOₓ Films
Journal of the Korean Physical Society, Vol. 64
In-Su Mok, Jonggi Kim, Kyumin Lee, Youngjae Kim, Hyunchul Sohn, Hyoungsub Kim
[2] Effects of Nitrogen Incorporation in HfO₂ Grown on InP by Atomic Layer Deposition: An Evolution in Structural,
Chemical, and Electrical Characteristics
ACS Applied Materials & Interfaces, Vol. 6
Yu-Seon Kang, Dae-Kyoung Kim, Hang-Kyu Kang, Kwang-Sik Jeong, Mann-Ho Cho, Dae-Hong Ko, Hyoungsub Kim,
Jung-Hye Seo, Dong-Chan Kim
[3] Influences of rapid thermal process on solution-deposited Ti-silicate/Si films: Phase segregation, composition and
interface changes, and dielectric properties
Materials Chemistry and Physics, Vol. 145
Seung Muk Lee, Soo Min Hwang, Soon Yong Hwang, Tae Woong Kim, Sang Hyub Lee, Geun Chul Park, Ju Yun Choi,
Jae Jin Yoon, Tae Jung Kim, Young Dong Kim, Hyoungsub Kim, Jun Hyung Lim, Jinho Joo
[4] Effect of indium doping on low-voltage ZnO nanocrystal field-effect transistors with ion-gel gate dielectric
Japanese Journal of Applied Physics, Vol. 53
Jungwoo Kim, Ji-Hyuk Choi, Heeyeop Chae, and Hyoungsub Kim
[5] Tailoring the Interface Quality between HfO₂ and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition
ACS Applied Materials & Interfaces, Vol. 6
Young-Chul Byun, Sungho Choi, Youngseo An, Paul C. McIntyre, and Hyoungsub Kim
[6] Defect-Free Erbium Silicide Formation Using an Ultrathin Ni interlayer
ACS Applied Materials & Interfaces, Vol. 6
Juyun Choi, Seongheum Choi, Yu-Seon Kang, Sekwon Na, Hoo-Jeong Lee, Mann-Ho Cho, and Hyoungsub Kim
[7] Structural evolution and defect control of yttrium-doped ZrO₂ films grown by a sol-gel method
Applied Surface Science, Vol. 320
Kwang Sik Jeong, Jinho Song, Donghyeok Lim, Myung Soo Lee, Hyoungsub Kim, Mann-Ho Cho
2013
[1] Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires
Nanotechnology, Vol. 24
Soonjae Kim, Sekwon Na, Haseok Jeon, Sunho Kim, Byunghoon Lee, Jaehyun Yang, Hyoungsub Kim and Hoo-Jeong
Lee
[2] Effect of thermal treatment on the chemical resistance of polydimethylsiloxane for microfluidic devices
Journal of Micromechanics and Microengineering, Vol. 23
Jihoon Lee, Jungwoo Kim, Hyoungsub Kim, Young Min Bae, Kyeong-Hee Lee and Hyoung J Cho
[3] Structural Evolution and the Control of Defects in Atomic Layer Deposited HfO₂-Al₂O₃ Stacked Films on GaAs
ACS Applied Materials & Interfaces, Vol. 5
Yu-Seon Kang, Dae-Kyoung Kim, Kwang-Sik Jeong, Mann-Ho Cho, Chung Yi Kim, Kwun-Bum Chung, Hyoungsub Kim,
and Dong-Chan Kim
[4] Comparative Study of Atomic-Layer-Deposited Stacked (HfO₂/Al₂O₃) and Nanolaminated (HfAlOₓ) Dielectrics on
In₀.₅₃Ga₀.₄₇As
ACS Applied Materials & Interfaces, Vol. 5
Chandreswar Mahata, Young-Chul Byun, Chee-Hong An, Sungho Choi, Youngseo An, and Hyoungsub Kim
[5] Microstructure and electrical properties of XInZnO (X = Ti, Zr, Hf) films and device performance of their thin film
transistors—The effects of employing Group IV-B elements in place of Ga
Journal of Alloys and Compounds, Vol. 563
Mi Ran Moon, Haseok Jeon, Sekwon Na, Sunho Kim, Donggeun Jung, Hyoungsub Kim, Hoo-Jeong Lee
[6] Improved Growth Behavior of Atomic-Layer-Deposited High-κ Dielectrics on Multilayer MoS₂ by Oxygen Plasma
Pretreatment
ACS Applied Materials & Interfaces, Vol. 5
Jaehyun Yang, Sunkook Kim, Woong Choi, Sang Han Park, Youngkwon Jung, Mann-Ho Cho, and Hyoungsub Kim
[7] Electrical characteristics of HfO₂ films on InP with different atomic-layer-deposition temperatures
Physica Status Solidi A, Vol. 210
Chee-Hong An, Chandreswar Mahata, Young-Chul Byun, Myung Soo Lee, Yu-Seon Kang, Mann-Ho Cho, and
Hyoungsub Kim
[8] Atomic-layer-deposited (HfO₂)₁₋ₓ(Al₂O₃)ₓ nanolaminate films on InP with different Al₂O₃ contents
Journal of Physics D: Applied Physics, Vol. 46
Chee-Hong An, Chandreswar Mahata, Young-Chul Byun and Hyoungsub Kim
[9] Application of rapid thermal process to solution-processed Ti-silicate films for enhancing permittivity without losing
amorphous nature
Current Applied Physics, Vol. 13
Seung Muk Lee, Soo Min Hwang